The metal–oxide–Semiconductor field-effect transistor (mosfet, MOS-FET, or MOS FET), also known as the metal–oxide–silicon transistor (MOS transistor, or MOS), is a type of insulated-gate field-effect transistor that is fabricated by the controlled oxidation of a Semiconductor, typically silicon. The voltage of the covered gate determines the electrical conductivity of the Device; this ability to change conductivity with the amount of applied voltage can be used for amplifying or switching technology since the 1960s, and enables high-density ICs such as memory

UK design: Pulsiv raises £620k and adds senior staff

Darrel Kingham has become CEO having left Aixtron as general manager. He was formerly with Arm.

Eupec FF150R12KE3G


UK and US agree science and technology partnership

Officials from both countries will work to develop the partnership over the course of the next year.

Google works out ML inference stack for Android

Next-generation front access fibre management system

HUBER+SUHNER has released SYLFA HD, a new front access solution to its extensive portfolio of scalable fibre management systems. With a unique, adaptable modular connectivity platform, the solution offers a space-saving structured cabling alternative for WAN/Access network, central office and data centre clients that is simple to install and manage.

Renault and ST enter into a strategic cooperation agreement

Efabless launches chipIgnite with SkyWater

Toshiba MIG30J103HB

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