The metal–oxide–Semiconductor field-effect transistor (mosfet, MOS-FET, or MOS FET), also known as the metal–oxide–silicon transistor (MOS transistor, or MOS), is a type of insulated-gate field-effect transistor that is fabricated by the controlled oxidation of a Semiconductor, typically silicon. The voltage of the covered gate determines the electrical conductivity of the Device; this ability to change conductivity with the amount of applied voltage can be used for amplifying or switching technology since the 1960s, and enables high-density ICs such as memory
Darrel Kingham has become CEO having left Aixtron as general manager. He was formerly with Arm.
Officials from both countries will work to develop the partnership over the course of the next year.
HUBER+SUHNER has released SYLFA HD, a new front access solution to its extensive portfolio of scalable fibre management systems. With a unique, adaptable modular connectivity platform, the solution offers a space-saving structured cabling alternative for WAN/Access network, central office and data centre clients that is simple to install and manage.