Semiconductor and its wide world are updating to advanced fabrication processes and wide bandgap semiconductors are of its kind. Among the wide bandgap (WBG) semiconductors, silicon carbide (SiC) and gallium nitride (GaN) is nowadays recognized as outstanding materials for the future of power electronics. In fact, owing to their excellent properties, they can guarantee a better energy efficiency in power conversion systems with respect to Silicon. Today, although several SiC and GaN devices have already reached the market, there are still many technological issues to be faced in order to fully exploit the enormous potential of these materials.
Our Development Plan Includes Industrial & Automotive Products to Enlarge the Offer of SiC MOSFETs and Diodes, STMicroelectronics : FRANCESCO MUGGERI
Macronix International Co., Ltd. (“Macronix”), a leading integrated Device designer and manufacturer in Non-Volatile Memory (NVM), and Hon Hai Technology Group (“Foxconn”), the world’s largest electronics manufacturer and service provider, today announced the signing of an Asset Transaction Agreement for the sales of Macronix’s 6-inch wafer fab and equipment in Hsinchu Science Park to Foxconn for NT$2.52 billion. The transaction is expected to be closed by the end of 2021, and Foxconn plans to increase the monthly production capacity of the fab to 15,000 wafers in 2024.
The funding round was led by BlackRock with participation from Baillie Gifford and M12 (Microsoft’s venture fund), Blackbird Ventures and Temasek.
Toshiba Launches 5A 2ch H-Bridge Motor Drivers for Automotive Applications TOKYO—Toshiba
For industrial LiDAR, smart infrastructure and logistics are showing the highest growth, reaching $500 million each by 2026.
The group is calling for large scale O-RAN deployments from next year. “Macro deployment is the primary target”, says the group, adding that O-RAN small cells are also a target for indoors.