TI brings GaN technology to Delta Electronics’ server power supplies

TI brings GaN technology to Delta Electronics’ server power supplies

TI brings GaN technology to Delta Electronics’ server power supplies

Texas Instruments (TI) has said that its gallium nitride (GaN) technology and C2000 real-time microcontrollers (MCUs) are being combined with Delta Electronics’ power electronics expertise to design an enterprise server power-supply unit (PSU).

The PSU features an 80% improvement in power density with 1% better efficiency – up to 99.2% – for data centre applications, compared to enterprise server power supplies using a more traditional architecture. A 1% improvement equals 1-megawatt (or 800 households) total cost of ownership savings per data centre, according to a report from Energy Innovation.

Delta Electronics said that it chose TI due to its decade-long investment in GaN technology as well as its real-time control solution with C2000 MCUs. The C2000 delivers complex, time-critical processing, precision control, and software and peripheral scalability. In addition, they are able to support different power-design topologies and high switching frequencies to maximize a design’s power efficiency.

Commenting Steve Lambouses, vice president for High voltage Power at TI said, “In addition to technology investments, TI’s investments in internal manufacturing will allow new technologies like GaN to scale quickly and support customers like Delta.”

TI’s process, package and circuit-design techniques will also help to simplify manufacturing and enable the company to scale production volumes by configuring different options to support the changing needs of telecom, industrial and automotive companies.

GaN has crossed the threshold from being a future technology to an immediate, viable option available today for new designs of Power Supply systems,” said Jimmy Yiin, vice president and general manager of the Power and System Business Group at Delta Electronics.

“This is especially true for server PSUs, for which we are looking to exceed 98% efficiency and 100 W/inch3 of power density. The next several years will be exciting because GaN will revolutionise power design and architectures as we know them.”

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